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BD377
isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BD375/377/379 DESCRIPTION ·DC Current Gain: hFE= 20(Min)@ IC= 1A ·Complement to Type BD376/378/380 APPLICATIONS ·Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD375 VEBO Collector-Emitter Voltage 75 100 45 BD377 60 BD379 VCEO BD377 BD375 Collector-Base Voltage 50 BD379 VCBO UNIT 80 V V Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 3 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website:www.iscsemi.cn
STM
STMicroelectronics NV
スイス
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