Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN PLASTIC POWER TRANSISTORS
MJE13006
MJE13007
TO-220
Plastic Package
Switchmode Series NPN Silicon Power Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Sustaining Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
*Peak
Base Current Continuous
*Peak
Emitter Current Continuous
*Peak
Power Dissipation upto Ta=25ºC
Derate above=25ºC
Power Dissipation upto Tc=25ºC
Derate above=25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO (sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
MJE13007
400
700
MJE13006
300
600
9
8
16
4
8
12
24
2
16
80
640
PD
Tj, Tstg
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ºC
W
mW/ºC
- 65 to +150
ºC
* Pulse Test: Pulse Width =5ms, Duty Cycle<10%
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Maxmium Lead Temperature for
Soldering Purpose 1/8" from Case for 5
Seconds
Rth (j-c)
1.56
ºC/W
Rth (j-a)
62.5
ºC/W
TL
275
ºC
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
**VCEO(sus)
IC=10mA, IB=0
Collector Emitter sustaining voltage
MJE13006
MJE13007
ICEV
VCEV=Rated Value,VBE=(off)=1.5V
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
IEBO
**hFE
TC=100ºC
VCEV=Rated Value,VBE=(off)=1.5V
VEB=9V, IC=0
IC=2A, VCE=5V
IC=5A, VCE=5V
MIN
TYP
MAX
UNIT
1.0
V
V
mA
300
400
8
5
5.0
1.0
60
30
**Pulse Test: Pulse Width=300µs, Duty Cycle<2%
µ
Continental Device India Limited
Data Sheet
Page 1 of 4
mA
mA