1SV276
TOSHIBA Variable Capacitance Diode
Silicon Epitaxial Planar Type
1SV276
VCO for UHF Band Radio
•
Unit: mm
High capacitance ratio: C1 V/C4 V = 2.0 (typ.)
•
Low series resistance: rs = 0.22 Ω (typ.)
•
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
10
⎯
⎯
V
Reverse current
IR
VR = 10 V
⎯
⎯
3
nA
Capacitance
C1 V
VR = 1 V, f = 1 MHz
15
16
17
pF
Capacitance
C4 V
VR = 4 V, f = 1 MHz
7.0
8.0
8.5
pF
1.8
2.0
⎯
⎯
⎯
0.22
0.4
Ω
Capacitance ratio
Series resistance
rs
⎯
C1 V/C4 V
VR = 1 V, f = 470 MHz
Marking
1
2007-11-01
