S29GL512N
S29GL256N
S29GL128N
512, 256, 128 Mbit, 3 V, Page Flash
Featuring 110 nm MirrorBit
This product family has been retired and is not recommended for designs. For new and current designs, S29GL128S, S29GL256S,
and S29GL512T supersede the S29GL128N, S29GL256N, and S29GL512N respectively. These are the factory-recommended
migration paths. Please refer to the S29GL-S and S29GL-T Family data sheets for specifications and ordering information.
Distinctive Characteristics
Package Options
– 56-pin TSOP
– 64-ball Fortified BGA
Architectural Advantages
Single Power Supply Operation
– 3 volt read, erase, and program operations
Enhanced VersatileI/O Control
– All input levels (address, control, and DQ input levels) and outputs
are determined by voltage on VIO input. VIO range is 1.65 to VCC
Software & Hardware Features
ig
n
Software Features
– Program Suspend and Resume: read other sectors before
programming operation is completed
– Erase Suspend and Resume: read/program other sectors before
an erase operation is completed
– Data# polling and toggle bits provide status
– Unlock Bypass Program command reduces overall multiple-word
programming time
– CFI (Common Flash Interface) compliant: allows host system to
identify and accommodate multiple flash devices
Manufactured on 110 nm MirrorBit Process Technology
20-year Data Retention typical
Performance Characteristics
om
m
en
100,000 Erase Cycles per sector typical
D
ew
rN
de
d
Compatibility with JEDEC Standards
– Provides pinout and software compatibility for single-power supply
flash, and superior inadvertent write protection
Hardware Features
– Advanced Sector Protection
– WP#/ACC input accelerates programming time (when high
voltage is applied) for greater throughput during system
production. Protects first or last sector regardless of sector
protection settings
– Hardware reset input (RESET#) resets device
– Ready/Busy# output (RY/BY#) detects program or erase cycle
completion
fo
Flexible Sector Architecture
– S29GL512N: Five hundred twelve 64 Kword (128 Kbyte) sectors
– S29GL256N: Two hundred fifty-six 64 Kword (128 Kbyte) sectors
– S29GL128N: One hundred twenty-eight 64 Kword (128 Kbyte)
sectors
es
Secured Silicon Sector Region
– 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number,
accessible through a command sequence
– May be programmed and locked at the factory or by the customer
N
ot
R
ec
High Performance
– 90 ns access time (S29GL128N, S29GL256N)
– 100 ns (S29GL512N)
– 8-word/16-byte page read buffer
– 25 ns page read times
– 16-word/32-byte write buffer reduces overall programming time for
multiple-word updates
Low Power Consumption (typical values at 3.0 V, 5 MHz)
– 25 mA typical active read current;
– 50 mA typical erase/program current
– 1 µA typical standby mode current
Product Availability Table
Density
256 Mb
VCC
Availability
110 ns
Full
Now
100 ns
Full
Now
110 ns
512 Mb
Init. Access
Full
Now
100 ns
Full
Now
90 ns
Regulated
Now
•
198 Champion Court
•
Full
Now
100 ns
Full
Now
90 ns
Cypress Semiconductor Corporation
Document Number: 002-01522 Rev. *B
110 ns
128 Mb
Regulated
Now
San Jose, CA 95134-1709
•
408-943-2600
Revised January 08, 2016