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PSMN059-150Y,115
LF PA K 56 PSMN059-150Y N-channel TrenchMOS SiliconMAX standard level FET 3 October 2013 Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits • • Higher operating power due to low thermal resistance Suitable for high frequency applications due to fast switching characteristics 3. Applications • • • • Class D amplifier DC-to-DC converters Motion control Switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 150 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1; Fig. 3 - - 43 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 113 W VGS = 10 V; ID = 12 A; Tj = 25 °C; - 46 59 mΩ - 9.1 - nC Static characteristics RDSon drain-source on-state resistance Fig. 9; Fig. 10 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 12 A; VDS = 75 V; Fig. 11; Fig. 12 Scan or click this QR code to view the latest information for this product
NXP
NXP Semiconductors
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