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部品型式

MT48H16M32LFCM-75IT:B

製品説明
仕様・特性

512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page-size option1 • Configuration – 32 Meg x 16 (8 Meg x 16 x 4 banks) – 16 Meg x 32 (4 Meg x 32 x 4 banks) • Plastic “green” packages – 54-ball VFBGA (8mm x 9mm) 2 – 90-ball VFBGA (10mm x 13mm) 3 • Timing – cycle time – 6ns at CL = 3 – 7.5ns at CL = 3 • Power – Standard IDD2/IDD7 – Low-power IDD2/IDD71 • Operating temperature range – Commercial (0˚C to +70˚C) – Industrial (–40˚C to +85˚C) • Revision • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock • Internal, pipelined operation; column address can be changed every clock cycle • Four internal banks for concurrent operation • Programmable burst lengths: 1, 2, 4, 8, and continuous • Auto precharge, includes concurrent auto precharge • Auto refresh and self refresh modes • LVTTL-compatible inputs and outputs • On-chip temperature sensor to control self refresh rate • Partial-array self refresh (PASR) • Deep power-down (DPD) • Selectable output drive strength (DS) • 64ms refresh period Notes: H LF LG 32M16 16M32 BF CM -6 -75 None L None IT :B 1. Contact factory for availability. 2. Available only for x16 configuration. 3. Available only for x32 configuration. Table 1: Configuration Addressing 32 Meg x 16 16 Meg x 32 16 Meg x 32 Reduced Page-Size Option1 Number of banks 4 4 4 Bank address balls BA0, BA1 BA0, BA1 BA0, BA1 Row address balls A[12:0] A[12:0] A[13:0] Column address balls Note: 1. Contact factory for availability A[9:0] A[8:0] A[7:0] Architecture Table 2: Key Timing Parameters Clock Rate (MHz) Access Time Speed Grade CL = 2 CL = 3 CL = 2 CL = 3 -6 104 166 8ns 5ns -75 104 1. CL = CAS (READ) latency 133 8ns 5.4ns Note: PDF: 09005aef82ea3742 512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2007 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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