RJK0355DSP
Silicon N Channel Power MOS FET
Power Switching
REJ03G1650-0301
Rev.3.01
Apr 24, 2008
Features
•
•
•
•
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 8.5 mΩ typ. (at VGS = 10 V)
• Pb-free
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8)
8
5 6 7 8
D D D D
5
76
12
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
G
34
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Symbol
Ratings
Unit
VDSS
VGSS
ID
30
±20
12
V
V
A
96
12
A
A
Note1
ID(pulse)
IDR
Avalanche current
Avalanche energy
IAP Note 2
EAR Note 2
9
8.1
A
mJ
Channel dissipation
Channel to ambient thermal impedance
Pch Note3
θch-a Note3
1.8
69.4
W
°C/W
Tch
Tstg
150
–55 to +150
°C
°C
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
REJ03G1650-0301 Rev.3.01 Apr 24, 2008
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