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BR93L46
. BR93L46-W/F-W/RF-W/FJ-W/RFJ-W/ FV-W/RFV-W/RFVM-W Features Pin Configuration • 1k bit serial EEPROM organized as 64 × 16bit • Low voltage operation Read : 1.8~5.5V Write : 1.8~5.5V • Low current consumption Active : 1.5mA MAX (Vcc=1.8~2.5V) 3mA MAX (Vcc=2.5~5.5V) Standby : 2µA MAX BR93L46-W BR93L46F-W/FJ-W/FV-W CS 1 8 Vcc NC 1 8 NC SK 2 7 NC Vcc 2 7 GND DI 3 6 NC CS 3 6 DO 5 GND SK 4 5 DI DO 4 DIP8 SOP8/SOP-J8/SSOP-B8 BR93L46RF-W/RFJ-W /RFV-W/RFVM-W • Clock frequency : 500kHz MAX (Vcc=1.8~2.5V) 2MHz MAX (Vcc=2.5~5.5V) CS 1 7 NC DI 3 • Address auto-increment function during read operation 8 Vcc SK 2 • Write cycle time : 5ms MAX 6 NC DO 4 • Automatic erase-before-write function during write operation 5 GND SOP8/SOP-J8/SSOP-B8/MSOP8 • Inadvertent write protection function Defaults to power up with write-disabled state Pin Functions Software instructions for write-enable/disable Inadvertent write protection at low voltage (Vcc Lock-out function) Functions Pin Names Chip Select CS Serial Data Clock SK Serial Data Input DI DO Serial Data Output GND Ground Vcc Power Supply • READY/BUSY Status indicator function (DO pin) • Schmitt trigger circuit & noise filter are built into SK, DI pin. • TTL compatible input/output • 1,000,000 write cycle typical • 40 years data retention • Operating temperature range : -40~85˚C Block Diagram CS Voltage Detection Instruction Decode Control Clock Generation Write Disable SK DI DO Instruction Register High Voltage Generation Address Buffer 6bit Address Decoder 6bit Data Register 16bit R/W Amps 16bit 11 1k bit EEPROM Array
ROHM
ローム株式会社
日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM(R:抵抗 Ohm:抵抗を示す単位)はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
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