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IR2106S
Data Sheet No. PD60162 Rev. W IR2106(4)(S) & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Packages Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V (IR2106(4)) Undervoltage lockout for both channels 3.3V, 5V and 15V input logic compatible Matched propagation delay for both channels Logic and power ground +/- 5V offset. Lower di/dt gate driver for better noise immunity Outputs in phase with inputs (IR2106) Also available LEAD-FREE 8-Lead SOIC 8-Lead PDIP 14-Lead SOIC 14-Lead PDIP 2106/2301//2108//2109/2302/2304Feature Comparison Description CrossThe IR2106(4)(S) are high voltage, Input conduction Dead-Time Ground Pins Ton/Toff Part high speed power MOSFET and prevention logic IGBT drivers with independent high logic 2106/2301 COM and low side referenced output chanHIN/LIN no none 220/200 21064 VSS/COM nels. Proprietary HVIC and latch 2108 Internal 540ns COM HIN/LIN yes 220/200 immune CMOS technologies enable Programmable 0.54~5µs 21084 VSS/COM 2109/2302 Internal 540ns COM ruggedized monolithic construction. IN/SD yes 750/200 Programmable 0.54~5µs 21094 VSS/COM The logic input is compatible with yes 160/140 Internal 100ns HIN/LIN COM 2304 standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection up to 600V VCC VCC VB HIN HIN HO LIN LIN VS COM LO TO LOAD IR2106 up to 600V HO VCC www.irf.com VB HIN (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. V CC HIN VS LIN LIN V SS V SS IR21064 TO LOAD COM LO 1
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