KS24C011/021/041/081
1K/2K/4K/8K-bit
Serial EEPROM
Data Sheet
OVERVIEW
The KS24C011/021/041/081 serial EEPROM has a 1,024/2,048/4,096/8,192-bit (128/256/512/1,024-byte)
capacity, supporting the standard I2C™-bus serial interface. It is fabricated using Samsung’ most advanced
s
CMOS technology. One of its major feature is a hardware-based write protection circuit for the entire memory
area. Hardware-based write protection is controlled by the state of the write-protect (WP) pin. Using one-page
write mode, you can load up to 16 bytes of data into the EEPROM in a single write operation. Another significant
feature of the KS24C011/021/041/081 is its support for fast mode and standard mode.
FEATURES
I2C-Bus Interface
Operating Characteristics
•
Two-wire serial interface
•
•
Automatic word address increment
Operating voltage
— 2.5 V to 5.5 V (write)
— 2.2 V to 5.5 V (read)
EEPROM
•
•
1K/2K/4K/8K-bit (128/256/512/1,024-byte)
storage area
•
16-byte page buffer
•
— Maximum read current: < 200 µA at 5.5 V
Typical 3.5 ms write cycle time with
auto-erase function
— Maximum stand-by current: < 5 µA at 3.3 V
•
Hardware-based write protection for the entire
EEPROM (using the WP pin)
•
EEPROM programming voltage generated
on chip
•
1,000,000 erase/write cycles
— 100 kHz at standard mode
•
100 years data retention
— 400 kHz at fast mode
Operating current
— Maximum write current: < 3 mA at 5.5 V
•
Operating temperature range
— – 25°C to + 70°C (commercial)
— – 40°C to + 85°C (industrial)
•
•
Operating clock frequencies
Electrostatic discharge (ESD)
— 3,000 V (HBM)
— 300 V (MM)
Packages
•
8-pin DIP, SOP, and TSSOP
3-1
