TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TECHNICAL DATA
NPN SILICON MEDIUM POWER TRANSISTOR
Qualified per MIL-PRF-19500/207
Devices
2N1483
2N1484
2N1485
MAXIMUM RATINGS
Ratings
2N1486
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Col lector Current — Continuous
Tola I Power Dissipation
(01 TA = 25"C ( l )
(a)Tc = 25"C(2)
Operating & Storage Junction Temperature Range
Vr|.;o
Vrno
V| |)()
Ic
P,
Tj. TstR
2N1484
2N1486
Unit
2N1485
40
60
55
100
Vdc
Vdc
2N1483
12
3.0
Vdc
Adc
1.75
25
-65 to +200
i I
W
W
TO-8*
"C
1) Derate linearly 0.010 W/'C for TA > 25°C
2) Derate linearly 0.143 W/"C for TV > 25"C
See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
|
Min.
|
Max.
|
Unit
OFF CHARACTERISTICS
C.'ollector-Emilter Breakdown Voltage
1, = 100 mAdc
Collector-Base Breakdown Voltage
1, = 100 nAdc
Collector-Emitter Breakdown Voltage
V, „ = 1.5 Vdc, I r = 0.25 mAdc
Collector-Base Cutoff Current
V, •„ = 30 Vdc
V,|, = 5(IVdc
Emitter- Base Cutoff Current
V m = 12 Vdc
2N1483, 2N1485
2N 1 484, 2N I486
V(|!R)C| ()
40
55
Vdc
2N1483, 2N1485
2N 1 484, 2N 1486
V(MR)( HO
60
100
Vdc
2NI483, 2NI485
2N 1 484, 2N I486
V(HK)CI X
60
100
Vdc
2N 1 483, 2N 1 485
2N 1 484, 2N 1486
ICHO
15
15
(.lAdc
'i no
15
(t Adc
Quality Semi-Conductors