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部品型式

MT46H64M32LFCX-5

製品説明
仕様・特性

2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4 Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • 4 internal banks for concurrent operation • Data masks (DM) for masking write data; one mask per byte • Programmable burst lengths (BL): 2, 4, 8, or 16 • Concurrent auto precharge option is supported • Auto refresh and self refresh modes • 1.8V LVCMOS-compatible inputs • Temperature-compensated self refresh (TCSR) • Partial-array self refresh (PASR) • Deep power-down (DPD) • Status read register (SRR) • Selectable output drive strength (DS) • Clock stop capability • 64ms refresh; 32ms for the automotive temperature range Table 1: Key Timing Parameters (CL = 3) Speed Grade Clock Rate Access Time -5 200 MHz 5.0ns -54 185 MHz 5.0ns -6 166 MHz 5.0ns -75 133 MHz 6.0ns PDF: 09005aef8457b3eb t79m_mobile_lpddr.pdf - Rev. F 11/12 EN Marking • VDD/VDDQ – 1.8V/1.8V • Configuration – 128 Meg x 16 (32 Meg x 16 x 4 banks) – 64 Meg x 32 (16 Meg x 32 x 4 banks) • Addressing – JEDEC-standard – Reduced page-size1 – 4-die stack reduced page-size2 – 2-die stack standard – 4-die stack standard • Plastic "green" package – 60-ball VFBGA (10mm x 10mm) 3 – 90-ball VFBGA (9mm x 13mm) 4 • PoP (plastic "green" package) – 168-ball VFBGA (12mm x 12mm) 4 – 168-ball WFBGA (12mm x 12mm) 4 – 168-ball WFBGA (12mm x 12mm) 4 – 240-ball WFBGA (14mm x 14mm) 4 • Timing – cycle time – 5ns @ CL = 3 (200 MHz) – 5.4ns @ CL = 3 (185 MHz) – 6ns @ CL = 3 (166 MHz) – 7.5ns @ CL = 3 (133 MHz) • Power – Standard IDD2/IDD6 • Operating temperature range – Commercial (0˚ to +70˚C) – Wireless (–25˚C to +85˚C) – Industrial (–40˚C to +85˚C) – Automotive (–40˚C to +105˚C)1 • Design revision Notes: 1 1. 2. 3. 4. H 128M16 64M32 LF LG R4 L2 L4 B7 CX JV KQ MA MC -5 -54 -6 -75 None None WT IT AT :B Contact factory for availability. Available in the 168-ball JV package only. Available only for x16 configuration. Available only for x32 configuration. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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