ZTX750
ZTX751
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
ZTX750
SYMBOL
MIN. TYP.
Transition
Frequency
fT
Switching Times
ton
toff
Output
Capacitance
100
ZTX751
MAX MIN. TYP.
.
140
100
UNIT CONDITIONS.
MAX
.
140
MHz
IC=-100mA, VCE=-5V
f=100MHz
40
40
ns
450
450
ns
IC=-500mA,
VCC=-10V
IB1=IB2=-50mA
pF
VCB=10V f=1MHz
30
Cobo
30
ZTX750
ZTX751
ISSUE 3 – JULY 2005
FEATURES
* 60 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS
°C/W
°C/W
°C/W
-60
V
VEBO
-5
V
ICM
-6
A
IC
-2
A
Ptot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
175
116
70
Rth(j-amb)1
Rth(j-amb)2 †
Rth(j-case)
Thermal Resistance:Junction to Ambient 1
Junction to Ambient2
Junction to Case
-45
Power Dissipation: at Tamb=25°C
derate above 25°C
UNIT
V
VCEO
Continuous Collector Current
MAX.
UNIT
-80
Peak Pulse Current
SYMBOL
ZTX751
-60
Emitter-Base Voltage
PARAMETER
ZTX750
VCBO
Collector-Emitter Voltage
THERMAL CHARACTERISTICS
SYMBOL
Collector-Base Voltage
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ® 2%
PARAMETER
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
ZTX750
PARAMETER
200
Thermal Resistance (°C/W)
Max Power Dissipation - (Watts)
2.5
2.0
C
1.5
Am
1.0
0.5
0
-40 -20
0
20 40
bie
as
e
nt t
te
m
em
pe
ra
per
tu
re
at u
re
60 80 100 120 140 160 180 200
D=1 (D.C.)
t1
D=t1/tP
tP
100
V(BR)CBO
MIN. TYP.
-60
V(BR)CEO
V(BR)EBO
-5
D=0.1
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Switching Times
Output Capacitance
3-258
MAX. MIN. TYP.
-80
MAX.
IC=-100µA
-60
V
IC=-10mA
-5
ICBO
V
IE=-100µA
µA
µA
µA
µA
µA
VCB=-45V
VCB=-60V
VCB=-45V,Tamb=100°C
VCB=-60V,Tamb=100°C
VEB=-4V
-0.1
-0.1
IEBO
-10
-0.1
-0.1
VCE(sat)
UNIT CONDITIONS.
V
-10
D=0.2
0.001
ZTX751
-45
D=0.5
Single Pulse
0
0.0001
SYMBOL
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
VBE(sat)
-0.15 -0.3
-0.28 -0.5
-0.9
-1.25
-0.15 -0.3
V
-0.28 -0.5
V
-0.9
-1.25 V
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-1A, IB=-100mA
VBE(on)
-0.8
-0.8
V
IC=-1A, VCE=-2V
pF
IC=-50mA, VCE=-2V*
IC=-500mA,VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=500mA, VCC=10V
IB1=IB2=50mA
VCB=10V f=1MHz
hFE
ton
toff
Cobo
70
100
80
40
200
200
170
80
45
800
-1
300
70
100
80
40
30
3-257
200
200
170
80
45
800
-1
300
30
