1550nm MQW-DFB Laser Diode
C-15-DFB-E-XX-HT
Features
• Uncooled laser diode with MQW structure
• 5mW CW operation at 0 to +85ºC
• High temperature operation without active cooling
• Hermetically sealed active component
• Built-in InGaAs monitor photodiode
• Complies with Bellcore TA-NWT-000983
• Single frequency operation with high SMSR
• To-18 package with a flat window cap or a ball lens cap
Absolute Maximum Rating (Tc=25ºC)
Parameter
Symbol
Value
Unit
Optical Output Power
Po
6(CW)
mW
LD Reverse Voltage
VRLD
2
V
LD Forward Current
IFLD
150
mA
PD Reverse Voltage
VRPD
10
V
PD Forward Current
IFPD
2
mA
Operating Temperature
Topr
0 to +85
ºC
Storage Temperature
Tstg
-40 to +100
ºC
Optical and Electrical Characteristics( Tc=85ºC )
Parameter
Symbol
Min
Typical
Max
Unit
Test Condition
Threshold Current
Ith
-
-
50
mA
CW
Optical Output Power
Po
6
4
6
-
mW
CW, I=Ith+60mA *
CW, I=Ith+60mA Ball Lens Cap
* For Low profile flat window cap / Aspherical cap / Flat window cap
Optical and Electrical Characteristics( Tc=25ºC )
Parameter
Symbol
Min
Typical
Max
Unit
Test Condition
Slope Efficiency
Flat window cap
Ball lens cap
SE
0.15
0.12
0.25
0.18
-
mW/mA
CW,Po=5mW
Threshold Current
Ith
-
10
15
mA
CW
Optical Output Power
Po
5
-
-
mW
CW, kink free
Peak Wavelength
λ
1535
1550
1565
nm
CW,Po=5mW
Side Mode Suppression Ratio
Sr
30
35
-
dB
CW,Po=5mW (0 to 85ºC)
Forward Voltage
VF
-
1.2
1.5
V
CW,Po=5mW
∆λp/∆Τ
0.08
0.1
0.12
nm/ºC
CW,Po=5mW (0 to 85ºC)
θ//
θ⊥
-
25
35
-
deg.
CW,Po=5mW,FWHM
Ibias=Ith,10-90%
Temperature dependence of
peak wavelength
Beam Divergence
Rise/Fall Time
tr / tf
-
-
0.5
ns
Spectral Width (-20dB)
∆λ
-
-
1
nm
CW,Po=5mW
PD Monitor Current
Im
100
200
1200
µA
CW,Po=5mW, VRPD=2V
PD Dark Current
IDARK
-
-
0.1
µA
VRPD=5V
PD Capacitance
Ct
-
6
15
pF
VRPD=5V, f=1MHz
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LUMNDS798-NOV1504
rev. A.0
