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2SC4935Y
2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4935 Power Amplifier Applications • Unit: mm Good hFE linearity Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 3 A Base current IB 0.3 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 2 10 W Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA SC-67 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-10R1A temperature, etc.) may cause this product to decrease in the Weight: 1.7 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-12-21
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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