NDS8425
Single N-Channel, 2.5V Specified PowerTrench MOSFET
General Description
Features
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize on-state resistance and yet maintain low gate
charge for superior switching performance.
•
7.4 A, 20 V.
•
Fast switching speed
•
Low gate charge (11nC typical)
•
High performance trench technology for extremely low
RDS(ON)
•
High power and current handling capability in a widely
used surface mount package
These devices have been designed to offer exceptional
power dissipation in a very small footprint package.
Applications
•
DC/DC converter
•
Load switch
D
D
RDS(ON) = 0.022 Ω @ VGS = 4.5 V
RDS(ON) = 0.028 Ω @ VGS = 2.7 V
D
5
6
SO-8
S
S
S
Absolute Maximum Ratings
Symbol
2
8
G
3
7
D
4
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
±7.4
A
– Continuous
(Note 1a)
±20
– Pulsed
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
(Note 1c)
TJ, TSTG
W
1.2
1
-55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
25
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
NDS8425
NDS8425
13’’
12mm
2500 units
2001 Fairchild Semiconductor International
NDS8425 Rev D (W)
NDS8425
January 2001
NDS8425
Typical Characteristics
30
2.5
VGS = 4.5V
4.0V
3.5V
3.0V
25
2.5V
2
VGS = 2.0V
20
2.0V
15
1.5
2.5V
3.0V
10
3.5V
4.0V
1
4.5
5
1.5V
0
0.5
0
0.5
1
1.5
2
2.5
3
0
5
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
20
25
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.08
1.8
1.6
15
ID, DRAIN CURRENT (A)
ID = 7.4A
VGS = 4.5V
ID = 7.4 A
0.07
0.06
1.4
0.05
1.2
0.04
o
TA = 125 C
1.0
0.03
0.8
0.02
o
TA = 25 C
0.6
0.01
-50
-25
0
25
50
75
100
125
150
1
2
o
TJ, JUNCTION TEMPERATURE ( C)
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
o
TA = -55 C
VDS = 5V
VGS = 0V
o
25 C
10
25
o
o
125 C
20
TA = 125 C
1
15
0.1
10
0.01
5
0.001
o
25
o
-55 C
0.0001
0
0.5
1.5
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS8425 Rev D (W)