FDD3580/FDU3580
80V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
• 7.7 A, 80 V.
RDS(ON) = 29 mΩ @ VGS = 10 V
RDS(ON) = 33 mΩ @ VGS = 6 V
• Low gate charge (34nC typical)
This MOSFET features faster switching and lower gate
change than other MOSFETs with comparable RDS(ON)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
D
G
S
D-PAK
D-PAK
TO-252
(TO-252)
(TO-
I-PAK
(TO-251AA)
G D S
G
S
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
80
V
VGSS
Gate-Source Voltage
± 20
V
ID
Maximum Drain Current-Continuous
7.7
A
(Note 1a)
Maximum Drain Current – Pulsed
50
Maximum Power Dissipation @TC = 25oC
PD
3.8
(Note 1b)
W
42
(Note 1a)
TA = 25oC
TJ, TSTG
(Note 1)
TA = 25oC
Operating and Storage Junction Temperature Range
1.6
−55 to +175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to- Case
(Note 1)
3.5
°C/W
RθJA
Thermal Resistance, Junction-to- Ambient
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD3580
FDD3580
13’’
16mm
2500
FDU3580
FDU3580
Tube
N/A
75
2001 Fairchild Semiconductor Corporation
FDD3580/FDU3580 Rev A1(W)
FDD3580/FDU3580
August 2001
FDD3580/FDU3580
Typical Characteristics
2
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
60
5.0V
ID, DRAIN CURRENT (A)
50
6.0V
4.5V
40
30
4.0V
20
10
1.8
VGS = 4.0V
1.6
4.5V
1.4
5.0V
6.0V
1.2
0.8
0
0
1
2
3
4
0
5
10
20
VDS, DRAIN-SOURCE VOLTAGE (V)
40
50
60
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.06
2.5
ID =3.8A
ID = 7.7A
VGS = 10V
2.2
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.9
1.6
1.3
1
0.7
0.4
0.05
TA = 125oC
0.04
0.03
TA = 25oC
0.02
0.01
-50
-25
0
25
50
75
100
125
150
175
2
4
o
TJ, JUNCTION TEMPERATURE ( C)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
60
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
50
ID, DRAIN CURRENT (A)
10V
1
40
30
20
TA = 125oC
o
25 C
10
-55oC
VGS = 0V
10
TA = 125oC
1
0.1
25oC
0.01
-55oC
0.001
0.0001
0
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD3580/FDU3580 Rev. A1(W)
