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FDS4470

製品説明
仕様・特性

FDS4470 40V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. • 12.5 A, 40 V. RDS(ON) = 9 mΩ @ VGS = 10 V • Low gate charge (45 nC) • High performance trench technology for extremely Applications low RDS(ON) • High power and current handling capability • DC/DC converter DD D D D D 6 Pin 1 SO-8 Absolute Maximum Ratings Symbol 3 2 8 G S G S S S S S SO-8 4 7 D D 5 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 40 V VGSS Gate-Source Voltage +30/–20 V ID Drain Current 12.5 A – Continuous (Note 1a) – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) PD 1.4 (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range W 1.2 –55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4470 FDS4470 13’’ 12mm 2500 units ©2006 Fairchild Semiconductor Corporation FDS4470 Rev D1 (W) FDS4470 December 2006 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS trr Maximum Continuous Drain–Source Diode Forward Current (Note 2) Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage Diode Reverse Recovery Time IF = 12.5 A, diF/dt = 100 A/µs Qrr Diode Reverse Recovery Charge VSD 0.7 2.1 1.2 A V 33 nS 39 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when 2 mounted on a 1in pad of 2 oz copper b) 105°C/W when 2 mounted on a .04 in pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0% FDS4470 Rev D1 (W) FDS4470 Electrical Characteristics

ブランド

FAIRCHILD

会社名

Fairchild Semiconductor International, Inc

本社国名

U.S.A

事業概要

アメリカ合衆国の半導体メーカー。世界で初めて半導体集積回路の商業生産を開始した企業である。後に同社からは様々な人材が独立、幾つかはインテルを始めとする世界的な半導体メーカーへと成長していった。

供給状況

 
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