FDS6670S
30V N-Channel PowerTrench® SyncFET ™
General Description
Features
The FDS6670S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6670S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
•
13.5 A, 30 V.
RDS(ON) = 9 mΩ @ VGS = 10 V
RDS(ON) = 12.5 mΩ @ VGS = 4.5 V
•
Includes SyncFET Schottky body diode
•
Low gate charge (24nC typical)
•
High performance trench technology for extremely low
RDS(ON) and fast switching
Applications
•
• DC/DC converter
High power and current handling capability
• Motor drives
D
D
D
5
6
SO-8
S
S
S
Absolute Maximum Ratings
Symbol
2
8
G
3
7
D
4
1
T A =25 oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
13.5
A
– Continuous
(Note 1a)
– Pulsed
PD
50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
W
1
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
°C/W
(Note 1)
RθJA
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6670S
FDS6670S
13’’
12mm
2500 units
©2001 Fairchild Semiconductor Corporation
FDS6670S Rev E (W)
FDS6670S
August 2001
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
FDS6670S Rev E (W)
