FDS6692A
N-Channel PowerTrench® MOSFET
30V, 9A, 11.5mΩ
Features
General Description
RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
RDS(ON) and fast switching speed.
RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A
High performance trench technology for extremely low
RDS(ON)
Low gate charge
High power and current handling capability
RoHS Compliant
Applications
DC/DC converters
D
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D
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©2010 Fairchild Semiconductor Corporation
FDS6692A Rev. A2
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www.fairchildsemi.com
FDS6692A N-Channel PowerTrench® MOSFET
January 2010
tON
Turn-On Time
-
-
60
ns
td(ON)
Turn-On Delay Time
-
8
-
ns
tr
Rise Time
-
32
-
ns
td(OFF)
Turn-Off Delay Time
-
33
-
ns
tf
Fall Time
-
13
-
ns
tOFF
Turn-Off Time
-
-
69
ns
ISD = 9A
-
-
1.25
V
ISD = 2.1A
-
-
1.0
V
VDD = 15V, ID = 9A
VGS = 10V, RGS = 6.2Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
ISD = 9A, dISD/dt=100A/µs
-
-
27
ns
QRR
Reverse Recovered Charge
ISD = 9A, dISD/dt=100A/µs
-
-
17
nC
Notes:
1: Starting TJ = 25°C, L = 0.3mH, IAS = 23A, VDD = 27V, VGS = 10V.
2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
3: RθJA is measured with 1.0 in2 copper on FR-4 board
FDS6692A Rev. A2
3
www.fairchildsemi.com
FDS6692A N-Channel PowerTrench® MOSFET
Switching Characteristics (VGS = 10V)
