FDZ208P
P-Channel 30 Volt PowerTrench® BGA MOSFET
®
General Description
Features
Combining Fairchild’s advanced 30 Volt P-Channel
Trench II Process with ± 25 Volts Vgs. Abs. Max Gate
Rating for the ultimate low rDS(on) Battery Protection
MOSFET. This
MOSFET
also embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS(on).
• –12.5 A, –30 V. rDS(on) = 10.5 mΩ @ VGS = –10 V
rDS(on) = 16.5 mΩ @ VGS = –4.5 V
• Occupies only 14 mm2 of PCB area. Only 42% of
the area of SO-8
• Ultra-thin package: less than 0.8 mm height when
mounted to PCB
Applications
• 3.5 x 4 mm2 footprint
• Battery management
• High power and current handling capability
• Load switch
• Battery protection
S
Gate
G
Index
slot
D
Top
Bottom
Absolute Maximum Ratings
Symbol
VDS
VGS
ID
TA=25oC unless otherwise noted
Parameter
Ratings
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation (Steady State)
TJ, Tstg
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a)
(Note 1a)
Thermal Characteristics
RθJA
RθJB
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
208P
©2006 Fairchild Semiconductor Corporation
Device
FDZ208P
Reel Size
13’’
–30
± 25
–12.5
–60
2.2
1.0
–55 to +150
56
4.5
0.6
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
4000 units
FDZ208P Rev D (W)
FDZ208P P-Channel 30 Volt PowerTrench® BGA MOSFET
February 2006
FDZ208P P-Channel 30 Volt PowerTrench® BGA MOSFET
Dimensional Outline and Pad Layout
FDZ208P Rev D (W)
