SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
CDBM120-G Thru. CDBM1150-G
Reverse Voltage: 20 to 150 Volts
Forward Current: 1.0 Amp
RoHS Device
Features
- Batch process design, excellent powe
dissipation offers better reverse leakage
current and thermal resistance.
-Low profile surface mounted application
in order to optimize board space.
-Tiny plastic SMD package.
-Low power loss, high efficiency.
-High current capability, low forward voltage dorp.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planarchip, metal silicon junction.
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
Mini SMA/SOD-123
0.154(3.90)
0.138(3.50)
0.012(0.30) Typ.
0.071(1.80)
0.055(1.40)
0.122(2.80)
0.096(2.40)
Mechanical data
-Case: Molded plastic, JEDEC Mini SMA/SOD-123.
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight:0.027 gram(approx.).
0.067(1.70)
0.051(1.30)
0.035(0.90) Typ.
0.035(0.90) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings (at T A =25 C unless otherwise noted)
O
Symbol
CDBM
120-G
CDBM
130-G
CDBM
140-G
CDBM
150-G
CDBM
160-G
Repetitive peak reverse voltage
VRRM
20
30
40
50
60
80
100
150
V
Maximum RMS voltage
VRMS
14
21
28
35
42
56
70
105
V
Continuous reverse voltage
VR
20
30
40
50
60
80
100
150
V
Maximum forward voltage @IF=1.0A
VF
0.92
V
Forward rectified current
IO
1.0
A
IFSM
30
A
IR
0.5
10
mA
RθJA
98
Typ. diode junction capacitance (Note 1)
CJ
120
Operating junction temperature
TJ
Parameter
Forward surge current, 8.3ms half sine wave
superimposed on rated load (JEDEC method)
Reverse current on VR=VRRM
0.50
O
@TA=25 C
O
@TA=125 C
Typ. thermal resistance, junction to ambient air
Storage temperature
0.70
-55 to +125
TSTG
CDBM CDBM CDBM
180-G 1100-G 1150-G
0.85
Unit
O
C/W
pF
O
-55 to +150
C
O
-65 to +175
C
Note 1: f=1MHz and applied 4V DC reverse voltage.
REV:D
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Comchip Technology CO., LTD.
