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TC7W74FUTE12L
TC7W74FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7W74FU, TC7W74FK D-Type Flip Flop with Preset and Clear The TC7W74 is a high speed C2MOS D Flip Flop fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation. The signal level applied to the D INPUT is transferred to Q OUTPUT during the positive going transition of the CLOCK pulse CLEAR and PRESET are independent of the CLOCK and are accomplished by setting the appropriate input to an “L” level Input is equipped with protection circuits against static discharge or transient excess voltage. TC7W74FU (SM8) Features • • • TC7W74FK High speed: fMAX = 77 MHz (typ.) at VCC = 5 V Low power dissipation: ICC = 2 µA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) • Output drive capability: 10 LSTTL loads • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) ∼ Balanced propagation delays: tpLH − tpHL • • Wide operating voltage range: VCC (opr) = 2 to 6 V (US8) Marking Weight SSOP8-P-0.65: 0.02 g (typ.) SSOP8-P-0.50A: 0.01 g (typ.) TC7W74FU Part No. 7W74 Lot No. TC7W74FK Part No. W 74 Start of commercial production 1992-02 1 2014-11-18 TC7W74FU/FK Truth Table Inputs Outputs Function CLR PR D CK Q Q L H X X L H Clear H L X X H L Preset L L X X H H H H L L H H H H H L H H X Qn Qn No Change Operating Ranges Characteristics Symbol Rating Unit Supply voltage VCC 2 to 6 V Input voltage VIN 0 to VCC V VOUT 0 to VCC V Topr −40 to 85 °C Output voltage Operating temperature range 0 to 1000 (VCC = 2.0 V) Input rise and fall time tr, tf ns 0 to 500 (VCC = 4.5 V) 0 to 400 (VCC = 6.0 V) Electrical Characteristics DC Electrical Characteristics Characteristics Symbol Ta = −40 to 85°C Ta = 25°C Test Condition Typ. Max Min Max 1.5 1.5 4.5 3.15 3.15 4.2 4.2 2.0 0.5 0.5 4.5 1.35 1.35 6.0 1.8 1.8 2.0 1.9 2.0 1.9 4.5 4.4 4.5 4.4 6.0 5.9 6.0 5.9 IOH = −4 mA 4.5 4.18 4.31 4.13 IOH = −5.2 mA 6.0 5.68 5.80 5.63 2.0 0 0.1 0.1 4.5 0 0.1 0.1 Input voltage Low level High level VIL VOH VIN = VIH or VIL Output voltage Low level VOL VIN = VIH or VIL Unit 6.0 VIH Min 2.0 High level VCC (V) IOH = −20 µA IOL = 20 µA 6.0 0 0.1 4.5 0.17 0.26 0.33 IOL = 5.2 mA 6.0 0.18 0.26 V 0.1 IOL = 4 mA V 0.33 Input leakage current IIN VIN = VCC or GND 6.0 ±0.1 ±1.0 µA Quiescent supply current ICC VIN = VCC or GND 6.0 2.0 20.0 µA 3 2014-11-18
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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