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STW20NA50
STW20NA50 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)20# I(DM) Max. (A) Pulsed I(D)12.7 @Temp (øC)100# IDM Max (@25øC Amb)80 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250# Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.50 Thermal Resistance Junc-Amb.30 V(GS)th Max. (V)3.75 V(GS)th (V) (Min)2.25 @(VDS) (V) (Test Condition)30 @I(D) (A) (Test Condition)250u I(DSS) Max. (A)250u @V(DS) (V) (Test Condition)500 @Temp (øC) (Test Condition)25# I(GSS) Max. (A)100n
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