SSM3J13T
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (U-MOSII)
SSM3J13T
Power Management Switch
High Speed Switching Applications
Unit: mm
•
•
Small Package
Low on Resistance : Ron = 70 mΩ (max) (@VGS = −4 V)
: Ron = 95 mΩ (max) (@VGS = −2.5 V)
•
Low Gate Threshold Voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−12
V
Gate-Source voltage
VGSS
±8
V
ID
−3.0
DC
Drain current
Pulse
Drain power dissipation
IDP
A
−6.0
(Note 2)
PD
1.25
(Note 1)
W
JEDEC
―
―
Channel temperature
Tch
150
°C
JEITA
Storage temperature range
Tstg
−55~150
°C
TOSHIBA
Note:
2-3S1A
Weight: 10 mg (typ.)
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm , t = 10 s)
Note 2: The pulse width limited by max channel temperature.
Marking
Equivalent Circuit
3
3
KDH
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account
1
2007-11-01
