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1SS184TE85L
1SS184 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 Unit: mm Ultra High-Speed Switching Applications Small package: SC-59 Low forward voltage: VF (3) = 0.9 V (typ.) Fast reverse recovery time: trr = 1.6 ns (typ.) Small total capacitance: CT = 0.9 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Maximum (peak) reverse voltage Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300* mA Average forward current IO 100* mA Surge current (10 ms) Power dissipation IFSM 2* A P 150 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: JEDEC TO-236MOD JEITA SC-59 1-3G1F TOSHIBA Weight: 0.012 g (typ.) Unit rating. Total rating = unit rating × 1.5. Electrical Characteristics (Ta = 25°C) Symbol Test Circuit VF (1) Characteristics ― VF (2) Min Typ. Max IF = 1 mA ― 0.60 ― ― IF = 10 mA ― 0.72 ― VF (3) ― IF = 100 mA ― 0.90 1.20 IR (1) ― VR = 30 V ― ― 0.1 IR (2) ― VR = 80 V ― ― 0.5 Total capacitance CT ― VR = 0, f = 1 MHz ― 0.9 3.0 pF Reverse recovery time trr ― IF = 10 mA (Fig.1) ― 1.6 4.0 ns Forward voltage Reverse current Test Condition Unit V μA Marking Start of commercial production 1982-03 1 2014-03-01
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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