HOME>在庫検索>在庫情報
2SC4116-GRTE85L,F
2SC4116 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4116 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 70~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1586 • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Tstg Storage temperature range −55~125 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA SC-70 temperature/current/voltage and the significant change in TOSHIBA 2-2E1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating Weight: 0.006 g (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 60 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 μA VCE = 6 V, IC = 2 mA 70 ⎯ 700 IC = 100 mA, IB = 10 mA ⎯ 0.1 0.25 V VCE = 10 V, IC = 1 mA 80 ⎯ ⎯ MHz Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 2.0 3.5 pF NF VCE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 10 kΩ, ⎯ 1.0 10 dB DC current gain (Note) Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Note: hFE classification hFE (Note) VCE (sat) fT O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700, ( ) marking symbol Marking 1 2007-11-01 2SC4116 3 2007-11-01
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
宅配業者の代金引換又は商品到着後一週間以内の銀行振込となります。