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部品型式

2SC4116-GRTE85L,F

製品説明
仕様・特性

2SC4116 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4116 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 70~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1586 • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Tstg Storage temperature range −55~125 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA SC-70 temperature/current/voltage and the significant change in TOSHIBA 2-2E1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating Weight: 0.006 g (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 60 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 μA VCE = 6 V, IC = 2 mA 70 ⎯ 700 IC = 100 mA, IB = 10 mA ⎯ 0.1 0.25 V VCE = 10 V, IC = 1 mA 80 ⎯ ⎯ MHz Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 2.0 3.5 pF NF VCE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 10 kΩ, ⎯ 1.0 10 dB DC current gain (Note) Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Note: hFE classification hFE (Note) VCE (sat) fT O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700, ( ) marking symbol Marking 1 2007-11-01 2SC4116 3 2007-11-01

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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型式 数量 D/C・lead 備考 選択
2SC4116-GRTE85L,F 460個 06+ RoHS
2SC4116-GRTE85L,F 230個 028+ ROHS
2SC4116-GRTE85L,F 3096個    
2SC4116-GRTE85L,F 2700個 12PB  
2SC4116-GRTE85L,F 2619個    

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