This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SA1096, 2SC1096A
Unit: mm
8.0+0.5
–0.1
3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
3.05±0.1
11.0±0.5
Unit
Collector-base voltage (Emitter open)
VCBO
70
V
Collector-emitter voltage 2SC2497
(Base open)
2SC2497A
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
16.0±1.0
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• High collector-emitter voltage (Base open) VCEO
• TO-126B package which requires no insulation plate for installation to the heat sink
3.8±0.3
■ Features
1.9±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
φ 3.16±0.1
0.75±0.1
0.5±0.1
4.6±0.2
60
Collector current
IC
Peak collector current
ICP
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
5
V
1.5
0.5±0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
A
3
150
3
W
°C
−55 to +150
2
A
1.2
1
1.76±0.1
2.3±0.2
°C
■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
Conditions
Min
Typ
Max
Unit
ue
Parameter
VCBO
IC = 1 mA, IE = 0
70
V
VCEO
IC = 2 mA, IB = 0
50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
1
Collector-emitter cutoff current (Base open)
ICEO
VCE = 10 V, IB = 0
100
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
10
µA
hFE
VCE = 5 V, IC = 1 A
220
1
V
2SC2497
2SC2497A
en
an
Collector-emitter voltage
(Base open)
ce
/D
isc
on
tin
Collector-base voltage (Emitter open)
Ma
int
Forward current transfer ratio *1, 2
60
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
80
IC = 1.5 A, IB = 0.15 A
IC = 1.5 A, IB = 0.15 A
Transition frequency
V
VCB = 5 V, IE = − 0.5 A, f = 200 MHz
Cob
150
MHz
VCB = 20 V, IE = 0, f = 1 MHz
fT
Collector output capacitance
(Common base, input open circuited)
1.5
µA
35
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE
80 to 160
120 to 220
Publication date: January 2003
SJD00099BED
1
