IC62LV25616L
IC62LV25616LL
Document Title
256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM
Revision History
Revision No
History
Draft Date
Remark
0A
Initial Draft
May 1,2001
Preliminary
0B
1. Change for tPWE: 45 to 40 ns for 55 ns product
August 21,2001
: 60 to 40 ns for 70 ns product
2. Change for VCC: 2.2-3.6V to 2.7-3.6V
3.1 Change for ICC test conditiomn: VCC=Max. to 3V
3.2 Change for ICC: 35 to 40mA for 55 ns commercial product
30 to 35mA for 70 ns commercial porduct
25 to 30 mA for 100 ns commercial product
4. Change for ISB1 test conditions: with CE controlled only
5.1 Change for VDR Min. : 1.2 to 1.5V
5.2 Change for IDR test condition: VCC=1.2 to 1.5V
0C
January 29,2002
1.Change for ICC: 40 mA to 25 mA for 55 ns
35 mA to 20 mA for 70 ns
30 mA to 15mA for 100 ns
2.Change for IDR: 4µA to 5 µA for commercial/LL product
6µA to 9 µA for Industrial/LL Product
October 9,2002
Change for VOH: 2.0V to 2.4V
0D
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.
LPSR013-0D 10/11/2002
1
