3LP02M
Ordering number : EN6127A
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
3LP02M
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-resistance.
High-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
-30
Gate-to-Source Voltage
VGSS
±10
V
ID
--0.2
A
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
IDP
PD
PW≤10µs, duty cycle≤1%
V
--0.8
A
0.15
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Symbol
V(BR)DSS
IDSS
IGSS
Conditions
ID=-1mA, VGS=0V
VDS=--30V, VGS=0V
Ratings
min
typ
Unit
max
--30
V
--1
VGS=±8V, VDS=0V
VDS=--10V, ID=--100µA
--0.4
VDS=--10V, ID=--100mA
0.21
µA
±10
µA
--1.4
V
Forward Transfer Admittance
VGS(off)
yfs
ID=-100mA, VGS=-4V
ID=-50mA, VGS=-2.5V
2.4
3.1
Ω
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
3.5
4.9
Ω
ID=-10mA, VGS=-1.5V
VDS=--10V, f=1MHz
10
20
Input Capacitance
RDS(on)3
Ciss
0.3
S
28
Ω
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
15
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
5.2
pF
Turn-ON Delay Time
td(on)
tr
See specified Test Circuit.
24
ns
See specified Test Circuit.
75
ns
td(off)
tf
See specified Test Circuit.
200
ns
See specified Test Circuit.
150
ns
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : XD
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72606 / 32406PE MS IM TB-00002151 / 52899 SI IM TA-1852 No.6127-1/4
