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R1RW0416DSB-2PR
R1RW0416D Series 4M High Speed SRAM (256-kword × 16-bit) REJ03C0107-0200 Rev. 2.00 Dec.12.2008 Description The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepares 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting. Features • Single 3.3 V supply: 3.3 V ± 0.3 V • Access time: 10 ns / 12 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • Operating current: 145 / 130mA (max) • TTL standby current: 40 mA (max) • CMOS standby current : 5 mA (max) : : 0.8 mA (max) (L-version) 0.5 mA (max) (S-version) • Data retention current : 0.4 mA (max) (L-version) :0.2 mA (max) (S-version) • Data retention voltage: 2.0 V (min) (L-version , S-version) • Center VCC and VSS type pin out REJ03C0107-0200 Rev.2.00, Dec.12.2008, page 1 of 15
RENESAS
ルネサス エレクトロニクス株式会社
日本
2010年(平成22年)4月に設立された大手半導体メーカー。半導体製品の研究開発・製造・販売・サービス。主力製品は、マイコン(CISC、RISC)、パワーデバイス、アナログ&ミックスドシグナルIC、汎用IC、高周波デバイス、光半導体、車載用LSI、産業用LSI、メモリ、ASIC、USB ASSP、システムLSI
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