TPC8405
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type
(P Channel U−MOS IV/N Channel U-MOS III)
TPC8405
Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PC Applications
Unit: mm
Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)
N Channel RDS (ON) = 20 mΩ (typ.)
High forward transfer admittance : P Channel |Yfs| = 12S (typ.)
N Channel |Yfs| = 14S (typ.)
Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V)
N Channel IDSS = 10 μA (VDS = 30 V)
Enhancement-mode
: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
P Channel N Channel
Unit
Drain-source voltage
VDSS
−30
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−30
30
V
Gate-source voltage
VGSS
±20
±20
V
Drain current
DC
(Note 1)
ID
−4.5
6
Pulse
(Note 1)
IDP
−18
24
A
JEDEC
―
JEITA
―
TOSHIBA
Drain power Single-device operation
(Note 3a)
dissipation
(t = 10s)
Single-device value at
(Note 2a) dual operation (Note 3b)
PD (1)
1.5
1.5
PD (2)
1.1
1.1
Single-device operation
(Note 3a)
PD (1)
0.75
0.75
(t = 10s)
Single-device value at
(Note 2b) dual operation (Note 3b)
PD (2)
0.45
2-6J1E
0.45
Drain power
dissipation
Weight: 0.080 g (typ.)
W
13.2
(Note 4a)
23.4
(Note 4b)
Circuit Configuration
Single pulse avalanche energy
EAS
Avalanche current
IAR
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)
EAR
0.1
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
−4.5
6
mJ
A
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29
