Preliminary Technical Information
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH32N300
IXBT32N300
VCES = 3000V
IC110 = 32A
VCE(sat) ≤ 3.2V
TO-247 (IXBH)
Symbol
Test Conditions
Maximum Ratings
VCES
TC = 25°C to 150°C
3000
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
3000
V
VGES
Continuous
± 20
V
VGEM
Transient
± 30
V
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
80
32
280
A
A
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 10Ω
Clamped Inductive Load
ICM = 80
VCES ≤ 2400
A
V
PC
TC = 25°C
400
W
-55 ... +150
150
°C
Tstg
-55 ... +150
°C
300
260
Nm/lb.in.
6
4
g
g
C (TAB)
E
TO-268 (IXBT)
G
E
C (TAB)
°C
°C
1.13/10
C
°C
TJM
G
TJ
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Md
Mounting Torque (TO-247)
Weight
TO-247
TO-268
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IC = 250μA, VGE = 0V
3000
VGE(th)
IC = 250μA, VCE = VGE
2.5
ICES
VCE = 0.8 • VCES, VGE = 0V
IGES
VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 32A, VGE = 15V, Note 1
V
5.0
V
50 μA
2 mA
TJ = 125°C
±100
2.8
TJ = 125°C
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3.5
C
= Collector
TAB = Collector
Features
High Blocking Voltage
International Standard Packages
Low Conduction Losses
Advantages
Characteristic Values
Min.
Typ.
Max.
BVCES
G = Gate
E = Emitter
nA
3.2
V
V
Low Gate Drive Requirement
High Power Density
Applications:
Switched-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
DS100118(02/09)