HAT2195R
Silicon N Channel Power MOS FET
Power Switching
REJ03G0060-0300Z
Rev.3.00
Apr.01.2004
Features
•
•
•
•
•
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 4.6 mΩ typ. (at VGS = 10 V)
Outline
SOP-8
5 6 7 8
D D D D
8
5
7 6
4
G
3
1 2
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-a Note3
Tch
Tstg
30
±20
18
144
18
18
32.4
2.5
50
150
–55 to +150
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Rev.3.00, Apr.01.2004, page 1 of 6
