(3 k Ω)(1 0 0Ω) E
2SB1259
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081)
–120
V
ICBO
VCEO
–120
V
IEBO
VEBO
–6
V
V(BR)CEO
–10(Pulse–15)
A
hFE
Unit
VCB=–120V
–10max
µA
–10max
mA
VEB=–6V
IC=–10mA
–120min
VCE=–4V, IC=–5A
10.1±0.2
2000min
V
IB
–1
A
VCE(sat)
IC=–5A, IB=–10mA
–1.5max
PC
30(Tc=25°C)
W
VBE(sat)
IC=–5A, IB=–10mA
–2.0max
150
°C
fT
VCE=–12V, IE=0.2A
100typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
145typ
pF
3.9
V
13.0min
1.35±0.15
1.35±0.15
2.54
sTypical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–30
10
–3
–10
5
–6
6
0.6typ
1.6typ
0.5typ
0
–1
–2
–3
–4
–5
–2
0
–0.2
–6
–1
Collector-Emitter Voltage V C E (V)
–10
–100
(V C E =–4V)
20000
10000
D C Cur r ent Gai n h F E
Typ
5000
1000
500
100
5000
12
1000
5˚C
˚C
25
500
–3
0˚C
100
50
–0.5
–1
–5
20
–0.02
–10
–0.1
Collector Current I C (A)
–0.5
–1
–5
–10
0.3
100x100x2
)
Temp
at
si
10
nk
M aximu m Power Dissipat io n P C (W)
he
10
150x150x2
ite
5
fin
1
In
Without Heatsink
Natural Cooling
ith
–0.5
20
W
Co lle ctor Cu rren t I C (A)
s
s
Cut- off F req uency f T (MH Z )
0µ
s
m
–1
50x50x2
Without Heatsink
–0.05
0.5
1000
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
10
1m
10
DC
–0.03
–3
100
P c – T a Derating
–0.1
Emitter Current I E (A)
10
30
–10
–5
0.1
1
Time t(ms)
–20
100
(Case
0.5
Safe Operating Area (Single Pulse)
Typ
mp)
1
(V C E =–12V)
200
–2 –2.2
5
Collector Current I C (A)
f T – I E Characteristics (Typical)
0
0.05
–1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
20000
–0.1
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
50
–0.03
0
–1000
Base Current I B (mA)
h FE – I C Characteristics (Typical)
10000
–4
–1A
θ j - a (˚C /W)
0
–5A
–1
–30˚C
–5
I C =–10A
–6
e Te
I B =–1mA
–2
)
–2mA
–8
Temp
–10
A
(V C E =–4V)
(Case
A
–3m
–10
125˚C
–5m
–3
Collector Current I C (A)
A
Transient Thermal Resistance
–
m
10
B C E
I C – V BE Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
0m
Collector Current I C (A)
–5
–2
A
Weight : Approx 2.0g
a. Part No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
–15
0m
2.4±0.2
2.2±0.2
VCC
(V)
I C – V CE Characteristics (Typical)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
(Cas
Tstg
D C Cur r ent Gai n h F E
ø3.3±0.2
a
b
V
Tj
4.2±0.2
2.8 c0.5
25˚C
IC
Ratings
4.0±0.2
VCBO
External Dimensions FM20(TO220F)
(Ta=25°C)
Conditions
Symbol
0.8±0.2
Unit
±0.2
sElectrical Characteristics
(Ta=25°C)
Ratings
Symbol
C
8.4±0.2
sAbsolute maximum ratings
B
Equivalent circuit
Application : Driver for Solenoid, Relay and Motor and General Purpose
16.9±0.3
Darlington
2
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
41
