2SK3936
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II π-MOS VI)
2SK3936
Switching Regulator Applications
Unit: mm
•
Small gate charge: Qg = 60 nC (typ.)
•
•
•
•
•
Fast reverse recovery time: trr = 380 ns (typ.)
Low drain-source ON-resistance: RDS (ON) = 0.2 Ω (typ.)
High forward transfer admittance: |Yfs| = 16.5 S (typ.)
Low leakage current: IDSS = 500 μA (VDS = 500 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
23
Pulse
(Note 1)
IDP
92
Drain power dissipation (Tc = 25°C)
PD
150
W
Single-pulse avalanche energy
(Note 2)
EAS
759
mJ
Avalanche current
IAR
23
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
°C
Drain current
A
JEDEC
―
JEITA
TOSHIBA
SC-65
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
2
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.44 mH, IAR = 23 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29
