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F25S004A-50
ESMT F25S004A Flash 2.5V Only 4 Mbit Serial Flash Memory FEATURES Single supply voltage 2.3~3.3V Auto Address Increment (AAI) WORD Programming - Decrease total chip programming time over Byte-Program operations Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz Low power consumption - Active current：40mA - Standby current：75 μ A SPI Serial Interface - SPI Compatible : Mode 0 and Mode3 Reliability - 100,000 typical program/erase cycles - 20 years Data Retention Write Protect ( WP ) End of program or erase detection Hold Pin ( HOLD ) Program - Byte program time 7 μ s (typical) All Pb-free products are RoHS-Compliant Erase - Chip erase time 4sec(typical) - Block erase time 1sec (typical) - Sector erase time 90ms(typical) ORDERING INFORMATION PRODUCT ID SPEED PACKAGE COMMENTS F25S004A -50PG 50MHz 8 lead SOIC 150 mil Pb-free F25S004A -50PAG 50MHz 8 lead SOIC 200 mil Pb-free F25S004A –50DG 50MHz 8 lead PDIP 300 mil Pb-free GENERAL DESCRIPTION The F25S004A is a 4Megabit, 2.5V only CMOS Serial Flash memory device. ESMT’s memory devices reliably store memory data even after 100,000 program and erase cycles. Blocks can be erased individually without affecting the data in other blocks. Whole chip erase capabilities provide the flexibility to revise the data in the device. The device features a sector erase architecture. The device memory array is divided into 128 uniform sectors with 4K byte each ; 8 uniform blocks with 64K byte each. Sectors can be erased individually without affecting the data in other sectors. The sector protect/unprotect feature disables both program and erase operations in any combination of the sectors of the memory. Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 1.1 1/33
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