NAND01GR3B2C NAND01GW3B2C
NAND01GR4B2C NAND01GW4B2C
1-Gbit, 2112-byte/1056-word page,
1.8 V/3 V, single level cell NAND flash memory
Features
■
NAND interface
– x8 or x16 bus width
– Multiplexed address/ data
– Pinout compatibility for all densities
■
Supply voltage: 1.8 V/3 V
■
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
■
Block size
– x8 device: (128K + 4K spare) bytes
– x16 device: (64K + 2K spare) words
■
Page read/program
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
■
Fast block erase: 2 ms (typ)
■
Security features
– OTP area
– Serial number (unique ID) option
– Non-volatile protection option
ONFI 1.0 support
– Cache read
– Read signature
– Read
■
Data integrity
– 100,000 program/erase cycles per block
(with ECC)
– 10 years data retention
■
RoHS compliant packages
■
Development tools
– Error correction code models
– Bad blocks management and wear leveling
algorithms
– Hardware simulation models
Chip enable ‘don’t care’
■
■
Electronic signature
■
– Hardware program/erase locked during
power transitions
Status register
■
VFBGA63 9 x 11 x 1.05 mm
Cache read mode
■
FBGA
Copy back program mode
■
TSOP48 12 x 20 mm
■
Data protection
– Hardware block locking
Table 1.
Device summary
Reference
Root part numbers
NAND01GR3B2C, NAND01GW3B2C
NAND01G-B2C
NAND01GR4B2C, NAND01GW4B2C(1)
1. x16 organization only available for MCP products.
June 2009
Rev 4
1/65
www.numonyx.com
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