RT3N11M
Compound Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
OUTLINE DRAWING
RT3N11M is compound transistor built with two
Unit:mm
RT1N141 chips in SC-88 package.
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
⑥
④
⑤
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
⑥:COLLECTOR1
R1
RTr1
R2
R2
RTr2
R1
①
②
JEITA:SC-88
③
MAXIMUM RATING (Ta=25℃) (RTr1, RTr2)
SYMBOL
RATING
UNIT
VCBO
Collector to Base voltage
PARAMETER
50
V
VEBO
Emitter to Base voltage
10
V
VCEO
Collector to Emitter voltage
50
V
VIN
Input
40
V
IC
Collector current
100
mA
ICM
Peak Collector current
200
mA
.N1 1
PC
Collector dissipation(Total, Ta=25℃)
150
mW
1
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
voltage
MARKING
ISAHAYA ELECTRONICS CORPORATION
6
5
2
4
3