BGX50A...
Silicon Switching Diode Array
• Bridge configuration
• High-speed switching diode chip
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
BGX50A
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Type
BGX50A
Package
SOT143
Configuration
bridge
Marking
U1s
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
50
Peak reverse voltage
VRM
70
Forward current
IF
140
Non-repetitive peak surge forward current
IFSM
-
Total power dissipation
Ptot
210
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point 2)
RthJS
Value
Unit
V
mA
TS ≤ 74°C
-65 ... 150
Value
Unit
360
K/W
BGX50A
1Pb-containing
2For
package may be available upon special request
calculation of RthJA please refer to Application Note Thermal Resistance
1
2007-03-27
