, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA968
Silicon PNP Power Transistor
DESCRIPTION
• Collector-Emitter Breakdown Voltage
:V (BR) cEo=-160V(Min)
• Good Linearity of hFE
• Complement to Type 2SC2238
PIN 1.BASE
2.COLLECTOR
3-EMITTER
TO-220C package
APPLICATIONS
• Power amplifier applications
• Driver stage amplifier applications
. , »
U k
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
f
PARAMETER
T
VALUE
H,
T
UNIT
Ill
K
VCBO
Collector-Base Voltage
-160
V
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
-160
V
-5
T
'1*°
T
H
VCEO
* *S
I.
*
.
rf
liQ
A
SYMBOL
-« E
!
1
•* \< H |
f
c
Jt
V
»r J
>H
» Rr
c
i
Ic
Collector Current-Continuous
-1.5
A
IE
Emitter Current- Continuous
1.5
A
PC
Total Power Dissipation
@ TC=25"C
25
W
Junction Temperature
150
Tj
Tstg
Storage Temperature Range
-55-150
°c
"C
mm
DIM
A
B
C
D
F
G
H
^
K
L
0
R
S
L
V
MIN
15,50
9.90
4.20
0.70
3.40
4.98
2,68
0.44
13,00
1,20
2.70
2.30
1.29
6.45
8.66
MAX
15.90
10.20
4,50
0.90
3.70
5.18
2.90
0.60
13.40
I.4S
2.90
2.70
1.35
6.65
8.86
NJ Semi-ComUictors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of goii
going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Coruluctors encourages customers to verify that datasheets are current before placing orders.
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