8 Mbit (x8) Multi-Purpose Flash
SST39LF080 / SST39VF080
SST39LF/VF0803.0 & 2.7V 8Mb (x8) MPF memories
EOL Data Sheet
FEATURES:
• Organized as 1M x8
• Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF080
– 2.7-3.6V for SST39VF080
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
(typical values at 14 MHz)
– Active Current: 12 mA (typical)
– Standby Current: 4 µA (typical)
– Auto Low Power Mode: 4 µA (typical)
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Block-Erase Capability
– Uniform 64 KByte blocks
• Fast Read Access Time:
– 55 ns for SST39LF080
– 70 and 90 ns for SST39VF080
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
15 seconds (typical) for SST39LF/VF080
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 40-lead TSOP (10mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
PRODUCT DESCRIPTION
The SST39LF/VF080 devices are 1M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary,
high-performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST39LF080 write (Program or
Erase) with a 3.0-3.6V power supply. The SST39VF080
write (Program or Erase) with a 2.7-3.6V power supply.
They conform to JEDEC standard pinouts for x8 memories.
Featuring high performance Byte-Program, the SST39LF/
VF080 devices provide a typical Byte-Program time of 14
µsec. The devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect
against inadvertent write, they have on-chip hardware and
Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications,
these devices are offered with a guaranteed typical
endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
native flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technologies. They also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the
SST39LF/VF080 are offered in 40-lead TSOP and 48ball TFBGA packages. See Figures 1 and 2 for pin
assignments.
The SST39LF/VF080 devices are suited for applications
that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and
reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alter©2007 Silicon Storage Technology, Inc.
S71146-07-EOL
6/07
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The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
