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CRZ39TE85L
CRY62 to CRZ39 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62 to CRZ39 ○ Surge absorber Unit: mm Average power dissipation : P = 0.7 W Zener voltage : VZ = 6.2 to 39 V Suitable for compact assembly due to small surface-mount package “S−FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Power dissipation P 0.7 W Junction temperature Tj −40 to 150 °C Tstg −40 to 150 °C Storage temperature range JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in TOSHIBA 3-2A1S temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.013 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Land Pattern Dimensions (reference only) Unit: mm 1.2 1.2 2.8 Start of commercial production 1999-09 1 2014-10-09
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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