TLP781/TLP781F
TOSHIBA Photocoupler
GaAs IRED & Photo−Transistor
TLP781, TLP781F
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission between Different Voltage
Circuits
TLP781
Unit: mm
The TOSHIBA TLP781 consists of a silicone photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a
four lead plastic DIP (DIP4) with having high isolation voltage
(AC: 5kVRMS (min)).
TOSHIBA
•
TLP781 : 7.62mm pitch type DIP4
•
TLP781F : 10.16mm pitch type DIP4
•
Collector-emitter voltage: 80V (min)
•
Current transfer ratio: 50% (min)
Weight: 0.25g (typ.)
Unit: mm
TLP781F
Rank GB: 100% (min)
•
Isolation voltage: 5000Vrms (min)
•
UL recognized: UL1577, file No. E67349
•
BSI approved: BS EN60065:2002
Approved no.8961
BS EN60950-1:2006
Approved no.8962
•
SEMKO approved:EN60065:2002
Approved no.800514
EN60950-1:2001, EN60335-1:2002
Approved no.800517
•
Option(D4)type
VDE approved : DIN EN60747-5-5
TOSHIBA
Weight: 0.25g (typ.)
Certificate No. 40021173
(Note): When an EN60747-5-5 approved type is needed,
Pin Configurations
(top view)
•
Construction mechanical rating
7.62mm Pitch
Standard Type
10.16mm Pitch
TLPxxxF Type
Creepage distance
6.5mm (min)
8.0mm (min)
Clearance
6.5mm (min)
8.0mm (min)
Insulation thickness
0.4mm (min)
0.4mm (min)
1
4
2
Please designate “Option (D4)”
3
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
Start of commercial production
1
2007/07
2014-09-08
