JDP2S04E
TOSHIBA Diode
Silicon Epitaxial Pin Type
JDP2S04E
VHF~UHF Band RF Attenuator Applications
•
Unit: mm
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
•
Low capacitance ratio: CT = 0.25 pF (typ.)
•
Low series resistance: rs = 3 Ω (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
50
V
Forward current
IF
50
mA
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 10 μA
50
⎯
⎯
V
Reverse current
IR
VR = 50 V
⎯
⎯
0.1
μA
Forward voltage
VF
IF = 50 mA
⎯
0.95
1.0
V
Capacitance
CT
VR = 50 V, f = 1 MHz
⎯
0.25
0.4
pF
Series resistance
rs
IF = 10 mA, f = 100 MHz
⎯
3.0
⎯
Ω
Note: Signal level when capacitance is measured: Vsig = 20 mVrms
Marking
1
2007-11-01
