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RB751S-40TE61
Data Sheet Schottky barrier diode RB751S-40 Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.12±0.05 0.8 0.6 0.8±0.05 1.6±0.1 1.2±0.05 1.7 Features 1) Ultra small mold type. (EMD2) 2) Low VF 3) High reliability EMD2 Construction Silicon epitaxial planar Structure 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications(Unit : mm) 0.2±0.05 φ1.5±0.05 2.0±0.05 φ1.55±0.05 1.25 0.06 1.26±0.05 0 3.5±0.05 0 0.6 1.25 0.06 1.3±0.06 0 0 2.40±0.05 2.45±0.1 8.0±0.15 1.75±0.1 4.0±0.1 0.2 φ0.5 0.95±0.06 0.90±0.05 空ポケット Empty pocket 0 Absolute maximum ratings(Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) Average retified forward current Io IFSM Forward currnt surge peak(60Hz/1cyc) Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage 2.0±0.05 4.0±0.1 Limits 0.76±0.05 0.75±0.05 Unit V V mA mA °C °C 40 30 30 200 125 -40 to +125 Min. Typ. Max. Unit - - 0.37 V Conditions IF=1mA Reverse current IR - - 0.5 μA VR=30V Capacitance between terminals Ct - 2 - pF VR=1V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.C
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