TT8J21
-20V Pch + Pch Middle Power MOSFET
Datasheet
l Outline
TSST8
VDSS
-20V
RDS(on)(Max.)
68mΩ
ID
±2.5A
PD
1.25W
l Features
l Inner circuit
1) Low on - resistance.
2) -1.5V Drive.
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TSST8).
5) Pb-free lead plating ; RoHS compliant
l Packaging specifications
Embossed
Tape
Packing
l Application
Reel size (mm)
Switching
Type
180
Tape width (mm)
8
Basic ordering unit (pcs)
3000
Taping code
TR
Marking
J21
l Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
total
Power dissipation
±2.5
A
±10
A
VGSS
Gate - Source voltage
V
ID,pulse*1
Pulsed drain current
-20
ID
Continuous drain current
Unit
VDSS
Drain - Source voltage
Value
±10
V
PD*2
element
1.25
1.0
W
PD*3
Range of storage temperature
150
℃
Tstg
Junction temperature
0.6
Tj
total
-55 to +150
℃
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© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150730 - Rev.001
TT8J21
Datasheet
l Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
1270
-
Output capacitance
Coss
VDS = -10V
-
100
-
Reverse transfer capacitance
Crss
f = 1MHz
-
90
-
VDD ⋍ -10V,VGS = -4.5V
-
9
-
tr*4
ID = -1.2A
-
30
-
td(off)*4
RL = 8.3Ω
-
120
-
tf*4
RG = 10Ω
-
85
Unit
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on)*4
pF
ns
l Gate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Total gate charge
Qg*4
VDD ⋍ -10V
-
12
-
Gate - Source charge
Qgs*4
ID = -2.5A
-
2.5
-
Gate - Drain charge
Qgd*4
VGS = -4.5V
-
2.0
Unit
-
nC
l Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Body diode continuous
forward current
Symbol
Conditions
Values
Typ.
Max.
-
IS
Min.
-
-0.8
Ta = 25℃
Body diode
pulse current
ISP*1
Forward voltage
VSD*4
A
-
VGS = 0V, IS = -2.5A
Unit
-
-10
-
-
-1.2
V
*1 Pw≦10μs , Duty cycle≦1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (20×20×0.8mm)
*4 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
3/11
20150730 - Rev.001