MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
OUTLINE DRAWING
CR02AM
Dimensions
in mm
φ5.0 MAX
VOLTAGE
CLASS
TYPE
NAME
2
1
12.5 MIN
3
5.0 MAX
4.4
1 CATHODE
2 ANODE
3 GATE
CIRCUMSCRIBE
CIRCLE
φ0.7
3.9 MAX
1.3
1.25 1.25
3 2 1
• IT (AV) ........................................................................ 0.3A
• VDRM .................................................... 200V/300V/400V
• IGT ......................................................................... 100µA
JEDEC : TO-92
APPLICATION
Solid state relay, leakage protector, fire alarm, timer, ringcounter, electric blankets, strobe flasher,
other general purpose control applications
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
4
6
Unit
8
VRRM
Repetitive peak reverse voltage
200
300
400
V
VRSM
Non-repetitive peak reverse voltage
300
400
500
V
VR (DC)
DC reverse voltage
160
240
320
V
VDRM
Repetitive peak off-state voltage
V1
200
300
400
V
VD (DC)
DC off-state voltage
V1
160
240
320
V
Symbol
Conditions
RMS on-state current
IT (AV)
Average on-state current
Commercial frequency, sine half wave, 180° conduction, Ta=30°C
ITSM
Surge on-state current
60Hz sine half wave 1 full cycle, peak value, non-repetitive
I2t
I2t
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
for fusing
Ratings
Unit
0.47
Parameter
IT (RMS)
A
0.3
A
10
A
0.4
A2s
0.1
W
0.01
W
Peak gate forward voltage
6
V
VRGM
Peak gate reverse voltage
6
V
IFGM
Peak gate forward current
0.1
Tj
Junction temperature
—
Weight
Typical value
°C
–40 ~ +125
Storage temperature
Tstg
A
–40 ~ +125
°C
0.23
g
V1. With Gate-to-cathode resistance RGK =1kΩ
Sep.2000
