DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3433
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SK3433 is N-channel MOS Field Effect Transistor
PART NUMBER
designed for high current switching applications.
PACKAGE
2SK3433
RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 20 A)
TO-263
2SK3433-Z
• Super low on-state resistance:
TO-262
2SK3433-ZJ
FEATURES
TO-220AB
2SK3433-S
TO-220SMDNote
Note TO-220SMD package is produced only
RDS(on)2 = 41 mΩ MAX. (VGS = 4.0 V, ID = 20 A)
in Japan.
• Low Ciss: Ciss = 1500 pF TYP.
• Built-in gate protection diode
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
ID(DC)
±40
A
ID(pulse)
±80
A
Total Power Dissipation (TC = 25°C)
PT
47
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Drain Current (DC) (TC = 25°C)
Drain Current (pulse)
Note1
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
(TO-262)
°C
Single Avalanche Current
Note2
IAS
21
A
Single Avalanche Energy
Note2
EAS
44
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14602EJ4V0DS00 (4th edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999, 2001
