S15VB60
SILICON BRIDGE RECTIFIER
BR50
PRV : 600 Volts
Io : 15 Amperes
0.728(18.50)
0.688(17.40)
FEATURES :
*
*
*
*
*
*
0.570(14.50)
0.530(13.40)
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
0.685
(16.70)
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
1.130(28.70)
1.120(28.40)
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
VALUE
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
600
V
Maximum RMS Voltage
VRMS
420
V
Maximum DC Blocking Voltage
VDC
600
V
Maximum Average Forward Current Tc = 83°C
IF(AV)
15
A
IFSM
200
A
Current Squared Time at 2ms < t < 10 ms. Tc = 25 °C
I2t
200
A2S
Maximum Forward Voltage per Diode at IF = 7.5 A
VF
1.05
V
IR
10
µA
RθJC
2.3
°C/W
TJ
150
°C
TSTG
- 40 to + 150
°C
Maximum Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum DC Reverse Current at VR = VRRM
(Pulse Measurement, Rating of per diode)
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Notes :
1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate
Page 1 of 2
Rev. 01 : April 2, 2002
